The 1GG7-8045 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high output power and moderate gain over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the 1GG7-8045 an ideal wideband power block. Ebeam lithography is used to produce gate lengths of ~0.3 mm. The 1GG7-8045 incorporates advanced MBE technology, TiPtAu gate metallization, silicon nitride passivation, and polyimide for scratch protection.

Keysight 1GG7-8045 does not contain any intentionally added RoHS substances above permitted maximum thresholds.

All HMMC parts are manufactured in Santa Rosa, California using Keysights reliable instrument grade GaAs process.

(1Gxx products are for sale to select customer only)

WideFrequency Range: 226.5 GHz

Moderate Gain: 7.5 dB

Gain Flatness: 1 dB

Input Return Loss: 17 dB

Output Return Loss: 14 dB

LowFrequency Operation Capability: < 2 GHz

Gain Control: 30 dB Dynamic Range

High Power: P1dB of 26 dBm @ 20 GHz P1dB of 23 dBm @ 26 GHz

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